Electron emitter formed of a dielectric material characterized by having high mechanical quality factor
US7723909B2 · kind B2 · utility
11Cited by
5References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 21, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Aug 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3125
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.