Patent · US Active

System and method for providing phase shift mask passivation layer

US7727682B2 · kind B2 · utility

2Cited by

3References

11Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Hung-Ting Pan · Taoyuan, TW
Ken Wu · San Jose, US
Luke Hsu · Hsinchu, TW
Yao-Ching Ku · Hsinchu, TW

Key dates

Filing date	Mar 21, 2007
Grant date	Jun 1, 2010
Priority date	—
Expiry date	Jul 15, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/86
WIPO fieldOptics
WIPO sectorInstruments

Abstract

System and method for providing a passivation layer for a phase shift mask (“PSM”) are described. In one embodiment, a PSM comprises a transparent substrate; a phase shift pattern disposed on the transparent substrate; and a passivation layer disposed to substantially cover exposed surfaces of at least a portion of the phase shift pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.