Methods of fabricating an electronic device and an sililation polyvinyl phenol for a dielectric layer of an electronic device
US7727703B2 · kind B2 · utility
0Cited by
7References
18Claims
0Family size
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Key dates
| Filing date | Nov 8, 2006 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
Abstract
A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.