Methods of forming a semiconductor device including a phase change material layer
US7727884B2 · kind B2 · utility
13Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2007 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Oct 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N═C═O”, “—N═C═S”, “—N═C═Se”, “—N═C═Te”, “—N═C═Po” and “—C≡N”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.