Patent · US Active

Method of making segmented contacts for radiation detectors using direct photolithography

US7728304B2 · kind B2 · utility

5Cited by

21References

29Claims

0Family size

Assignee

REDLEN TECHNOLOGIES, INC. · CA

Inventors

Henry Chen · Victoria, CA
Serguei Roupassov · Victoria, CA
Salah Awadalla · Victoria, CA

Key dates

Filing date	Dec 4, 2006
Grant date	Jun 1, 2010
Priority date	—
Expiry date	Mar 22, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldEnvironmental technology
WIPO sectorChemistry

Abstract

A method is provided for fabricating contacts on semiconductor substrates by direct lithography that results in durable adhesion of the electrodes, increased interpixel resistance and the electrodes which act as a blocking contact, thereby providing for improved energy resolution in a resultant radiation detector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.