Vertical phase change memory cell and methods for manufacturing thereof

US7728319B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Ludovic Goux · Hannut, BE
• Dirk Wouters · Heverlee, BE
• Judit Gloria Lisoni Reyes · Oud-Heverlee, BE
• Thomas Gille · Heverlee, BE

Key dates

• Filing date: Dec 12, 2006
• Grant date: Jun 1, 2010
• Expiry date: Jan 29, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.