2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material

US7728327B2 · kind B2 · utility

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Hyun-Tak Kim · Daejeon, KR
• Doo Hyeb Youn · Daejeon, KR
• Byung-Gyu Chae · Daejeon, KR
• Kwang Yong Kang · Daejeon, KR
• Yong Sik Lim · Sosu-myeon, KR
• Gyungock Kim · Daejeon, KR
• Sunglyul Maeng · Sosu-myeon, KR
• Seong Hyun Kim · Daejeon, KR

Key dates

• Filing date: Dec 13, 2004
• Grant date: Jun 1, 2010
• Expiry date: Jun 7, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.