Boundary isolation for microelectromechanical devices
US7728339B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2002 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/045
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A micromechanical structure is described. A region of semiconductor material has a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material. Insulative material covers the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary. To form the micromechanical structure, a trench is etched in a semiconductor substrate to surround a region of the semiconductor substrate. A surface of the semiconductor substrate and the trench are oxidized to form a top oxide and a lateral oxide region. A backside of the semiconductor substrate is etched to expose a backside of the region of the semiconductor substrate and a portion of the lateral oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.