Embedded memory device and a manufacturing method thereof
US7728374B2 · kind B2 · utility
0Cited by
1References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 19, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jun 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embedded memory device solves the problem of the low reliability of the circuit due to the unstable power source. The embedded memory includes a metal-oxide semiconductor (MOS) capacitor and a metal-insulator-metal (MIM) capacitor to increase the stability of the power source ring to stabilize the voltage of the embedded memory and stabilize the voltage for the peripheral circuit of the embedded memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.