Semiconductor memory device and method of forming the same
US7728375B2 · kind B2 · utility
7Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jul 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
Abstract
Example embodiments relate to a semiconductor memory device and a method of forming the semiconductor memory device. The semiconductor memory device may include a first interlayer insulating layer on a semiconductor substrate. A bit line may be arranged in a first direction on the first interlayer insulating layer. A bit line contact pad may be disposed in the first interlayer insulating layer and electrically connected to the bit line. A storage contact pad may be disposed in the first interlayer insulating layer. A top surface of the bit line contact pad may be lower than a top surface of the storage contact pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.