Punchthrough diode and method of manufacturing thereof

US7728404B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Rob Van Dalen · Veghel, NL
• Gerrit Elbert Johannes Koops · Leuven, BE

Key dates

• Filing date: Sep 26, 2008
• Grant date: Jun 1, 2010
• Expiry date: Sep 26, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/25

Abstract

A semiconductor device includes a substrate of a first conductivity type, and a first semiconductor region that includes a plurality of sub-regions of the first conductivity type that have a first doping concentration and a further semiconductor region of a second conductivity type opposite to the first conductivity type. The further semiconductor region separates the sub-regions from each other and the first semiconductor region is located on the substrate. The semiconductor device further includes a second semiconductor region of the first conductivity type located on the first semiconductor region, a third semiconductor region of the second conductivity type located on the second semiconductor region, and a fourth semiconductor region of the first conductivity type located on the third semiconductor region. The sub regions extend from the second semiconductor region into the substrate, and the thickness and the doping concentration of the second and the third semiconductor region are such that these regions are completely depleted during operation of the device.