Method for selective deposition of a thin self-assembled monolayer
US7728436B2 · kind B2 · utility
14Cited by
4References
10Claims
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Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jan 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.