Nitrogen semiconductor compound and device fabricated using the same
US7731796B2 · kind B2 · utility
1Cited by
9References
3Claims
0Family size
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Key dates
| Filing date | Feb 27, 2006 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Jan 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound as an organic semiconductor material or a hole conducting material. The nitrogen semiconductor compound can be spin-coated at room temperature when applied to the fabrication of the device, and has superior electrical conductivity and photovoltaic properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.