Patent · US Active

Method for producing photonic crystals

US7732122B2 · kind B2 · utility

1Cited by

1References

8Claims

0Family size

Assignees

Forschungszentrum Karlsruhe GmbH · DE
UNIVERSITY OF TORONTO · CA

Inventors

Sean Wong · Karlsruhe, DE
Georg von Freymann · Toronto, CA
Geoffrey Alan Ozin · Toronto, CA
Markus Deubel · Schweighofen, DE
Martin Wegener · Tauberbischofsheim, DE

Key dates

Filing date	Aug 5, 2005
Grant date	Jun 8, 2010
Priority date	—
Expiry date	Jan 13, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG02B6/1225
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a process for producing photonic crystals by first providing an inorganic photoresist which, on illumination with energy greater than the electronic band gap of the photoresist, exhibits a phase alteration. Illumination of the photoresist with a laser beam whose energy is lower than the electronic band gap of the photoresist but whose intensity at the focal point is so high that nonlinear effects occur there nevertheless results in a phase alteration in the photoresist. Thereafter, the illuminated photoresist is exposed to an etching solution which preferentially dissolves one phase of the photoresist, and the developed photoresist is finally removed therefrom as a photonic crystal. Inorganic photonic crystals produced by the process according to the invention are suitable for completely optical systems, circuits and components for optical telecommunication or computer systems.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.