Method of forming a body-tie
US7732287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2006 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | May 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
Abstract
A method of forming a body-tie. The method includes forming the body-tie during an STI scheme of an SOI process. During the STI scheme, a first trench is formed. The first trench stops before a buried oxide layer of the SOI substrate. The first trench may determine a height of body tie that is shared between at least two FETs. A second trench may also be formed within the first trench. The second trench stops in the SOI substrate. The second trench defines the location and shape of a body-tie. Once the location and shape of the body-tie are defined, an oxide is deposited above the body-tie. The deposited oxide prevents certain implants from entering the body tie. By preventing these implants, a source and a drain implant may be self-aligned to the source and drain areas without requiring the use of the photoresist mask to shield the body tie regions from the source and drain implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.