Method of manufacturing an insulating layer and method of manufacturing a semiconductor device using the insulating layer
US7732297B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2006 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Jun 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an insulating layer and a method of manufacturing a semiconductor device using insulating layer are disclosed. A preliminary insulating layer including a material having a relatively low dielectric constant is formed on an object. An upper portion of the preliminary insulating layer is provided with an ozone gas to transform the preliminary insulating layer into an insulating layer having an upper insulating film including an oxide and a lower insulating film including the material having the relatively low dielectric constant. The upper insulating film may further be located on the lower insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.