Semiconductor device and manufacturing method thereof
US7732819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2008 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Aug 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.