Photoelectric conversion device and method of manufacturing the same
US7732884B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Feb 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.