Electron-emitting device and manufacturing method thereof
US7733006B2 · kind B2 · utility
0Cited by
12References
18Claims
0Family size
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Key dates
| Filing date | Jun 13, 2003 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3048
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.