Memory device, a non-volatile semiconductor memory device and a method of forming a memory device

US7733698B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Joachim Deppe · Dresden, DE
• Dominik Olligs · Dresden, DE
• Christoph Kleint · Dresden, DE
• Eike Ruttkowski · Munich, DE
• Ricardo P. Mikalo · Stadtroda, DE

Key dates

• Filing date: Mar 21, 2007
• Grant date: Jun 8, 2010
• Expiry date: Apr 7, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/50

Abstract

A memory device having an array portion including memory cells, and a peripheral portion including conductive lines is disclosed. In one embodiment, portions of the conductive lines adjoin a surface of a semiconductor carrier.