Method for manufacturing vertical germanium detectors

US7736934B2 · kind B2 · utility

Assignee

• BAE Systems Information and Electronic Systems Integration Inc. · US

Inventors

• Daniel N. Carothers · Oro Valley, US
• Craig M. Hill · Warrenton, US
• Andrew T. S. Pomerene · Redding, US
• Vu A. Vu · Falls Church, US
• Joe Giunta · Warrenton, US
• Jonathan N. Ishii · Fredericksburg, US

Key dates

• Filing date: Oct 20, 2008
• Grant date: Jun 15, 2010
• Expiry date: Oct 20, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

An improved method for manufacturing a vertical germanium detector is disclosed. Initially, a detector window is opened through an oxide layer on a single crystalline substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished and removed until only a portion of the amorphous germanium layer is located around the single crystal germanium layer. A tetraethyl orthosilicate (TEOS) layer is deposited on the amorphous germanium layer and the single crystal germanium layer. An implant is subsequently performed on the single crystal germanium layer. After an oxide window has been opened on the TEOS layer, a titanium layer is deposited on the single crystal germanium layer to form a vertical germanium detector.