Patent · US Active

Carbon nanotube transistor fabrication

US7736943B2 · kind B2 · utility

4Cited by
22References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2007
Grant dateJun 15, 2010
Priority date
Expiry dateMay 20, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/962
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.