Method for manufacturing semiconductor device using overlapping exposure and semiconductor device thereof
US7736985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Apr 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The performance of a sensor in a semiconductor device can be improved. A plurality of oscillators forming an ultrasonic sensor are arranged on a main surface of a semiconductor chip. A negative-type photosensitive insulating film which protects the oscillators is deposited on an uppermost layer of the semiconductor chip. At the time of exposure for forming an opening in the photosensitive insulating film, the semiconductor chip is divided into a plurality of exposure areas and exposed, and then, the exposure areas are jointed so that the entire area is exposed. At this time, a stitching exposure area is arranged so that a center of the stitching exposure area in a width direction in the joint portion of the adjacent exposure areas is positioned at a center of a line which connects centers of oscillators located above and below the stitching exposure area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.