Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device
US7737044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2006 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Aug 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heat-flowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.