Method for controlling thickness distribution of a film
US7737048B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Jul 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.