Solar cell having doped semiconductor heterojunction contacts
US7737357B2 · kind B2 · utility
90Cited by
9References
14Claims
0Family size
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Key dates
| Filing date | May 4, 2006 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Dec 14, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.