Semiconductor device
US7737442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2006 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Sep 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device of the present invention has a first conductive layer, a second conductive layer, an insulating layer which is formed between the first conductive layer and the second conductive layer and which has a contact hole, and a third conductive layer which is connected to the first conductive layer and the second conductive layer and of which at least a part of an end portion is formed inside the contact hole. Near a contact hole where the second conductive layer is connected to the third conductive layer, the third conductive layer does not overlap with the second conductive layer with the first insulating layer interposed therebetween and an end portion of the third conductive layer is not formed over the first insulating layer. This allows suppression of depression and projection of the third conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.