Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion
US7737445B2 · kind B2 · utility
4Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2008 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Feb 14, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136295
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mask, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the first wire via the contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.