Photoelectric conversion device and manufacturing method thereof
US7737519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2005 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | May 25, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.