Patent · US Active

Controlled-grain-precious metal sputter targets

US7740723B2 · kind B2 · utility

1Cited by
10References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 17, 2007
Grant dateJun 22, 2010
Priority date
Expiry dateMay 17, 2027

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C14/3414
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 μm for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver an gold sputter targets.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.