Semiconductor device and fabricating method thereof
US7741138B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2008 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Sep 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
Abstract
A semiconductor device and fabricating method thereof are disclosed, by which channel mobility is enhanced and by which effect of flicker noise can be minimized. Embodiments relate to a method of fabricating a semiconductor device which includes forming a first epi-layer over a substrate, forming a second epi-layer over the first epi-layer, forming a gate electrode over the second epi-layer, forming a spacer over both sides of the gate electrode, etching an area adjacent both sides of the spacer to a depth of the substrate, forming an LDD region in a region under the spacer, and forming a third epi-layer for a source/drain region over the etched area adjacent both of the sides of the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.