Method of fabricating thin film transistor and organic electro-luminescent display device
US7741163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Aug 5, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
Abstract
A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.