Method for fabricating semiconductor device
US7741228B2 · kind B2 · utility
35Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jul 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.