Composition for organic polymer gate insulating layer and organic thin film transistor using the same
US7741635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2008 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Dec 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.