Backside illuminated imaging sensor with backside P+ doped layer
US7741666B2 · kind B2 · utility
75Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2008 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
Abstract
A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N− region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.