CMOS image sensor for improving the amount of light incident a photodiode
US7741667B2 · kind B2 · utility
9Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2006 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Apr 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
Provided are a CMOS image sensor and a fabricating method thereof. The CMOS image sensor includes a device isolation layer, a plurality of photodiode regions, an interlayer insulating layer, a refracting layer, a planarizing layer, a color filter layer, and a plurality of microlenses. The refracting layer, with a higher refractive index than that of the interlayer insulating layer, is formed through the interlayer insulating layer on portions of the device isolation layer, to divide the interlayer insulating layer and give the divided portions thereof the characteristics of a waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.