Semiconductor device
US7741683B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 10, 2008 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Aug 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device is disclosed. Embodiments relate to a semiconductor device which includes an active region including a source region, a drain region, and a channel region. A gate electrode, source electrodes, and a drain electrode are formed around the active region. A plurality of gate fingers diverge from the gate electrode into the channel region. A plurality of source fingers diverge from the source electrodes into the source region, the source fingers being disposed between the gate fingers in a predetermined pattern, the source fingers having at least two finger lines connected to each other via at least one grid line. A plurality of drain fingers diverge from the drain electrode into the drain region, the drain fingers being disposed between the gate fingers where the source fingers are not disposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.