High voltage isolation semiconductor capacitor digital communication device and corresponding package
US7741935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2008 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Nov 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, there is provided a semiconductor digital communication device comprising communication drive and sense electrodes formed in a single plane, where the electrodes have relatively high sidewalls. The relatively high sidewalls permit low electrical field densities to be obtained in the sense and drive electrodes during operation, and further permit very high breakdown voltages to be obtained between the electrodes, and between the drive electrode and an underlying ground plane substrate. The device effects communications between drive and receive circuits through the drive and sense electrodes by capacitive means, and in a preferred embodiment is capable of effecting relatively high-speed digital communications. The device may be formed in a small package using, by way of example, CMOS or other semiconductor fabrication and packaging processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.