Pixel structure having notch on capacitor electrode and contact opening above the notch connecting pixel electrode above passivation layer with the capacitor electrode
US7742115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | May 25, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/508
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pixel structure disposed on a substrate is provided. The pixel structure includes a first and a second capacitor electrode, a dielectric layer, a passivation layer, a pixel electrode, and an active device. The first capacitor electrode is disposed on the substrate and has a first notch. The dielectric layer covers the first capacitor electrode, and the second capacitor electrode is disposed on the dielectric layer above the first capacitor electrode. The passivation layer is disposed on the dielectric layer to cover the second capacitor electrode, and the passivation layer has a contact opening above the first notch for exposing a part of the second capacitor electrode. The pixel electrode is disposed on the passivation layer and is electrically connected to the second capacitor electrode through the contact opening. The active device is electrically connected to the pixel electrode. Additionally, a method for repairing the pixel structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.