Variable sense level for fuse-based non-volatile memory
US7742352B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Aug 19, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/50008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques for use with a fuse-based non-volatile memory circuit include digitally controlling a resistance threshold of the circuit. The circuit includes a fuse circuit and a comparator circuit. The comparator circuit is configured to compare a first signal indicative of the fuse resistance to a second signal indicative of a reference level. At least one of the first and second signals is digitally controllable. The comparator circuit is configured to generate a digital output signal indicative of the comparison. The circuit may include a first digital-to-analog converter circuit configured to generate a first analog signal based on at least a first plurality of digital signals. The first signal is at least partially based on the first analog signal. The circuit may include a control circuit configured to digitally control the digitally controllable ones of the first and second signals at least partially based on the digital output signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.