Bonding apparatus and bonding method
US7743964B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 26, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Feb 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding apparatus (10) that bonds an electrode of a semiconductor die (12) and an electrode of a circuit board (19) using a metal nano paste includes a bump formation mechanism (20) that forms bump by injecting microdroplets of a metal nano paste on each electrode, a primary bonding mechanism (50) that carries out primary bonding to the electrodes in a non-conductive state by pressing the bump of the semiconductor die (12) against the bump of the circuit board (19), and a secondary bonding mechanism (80) that carries out secondary bonding so that the electrodes become conductive by pressurizing the primary bonded bump in bonding direction and by heating the bump to pressurize and sinter the metal nanoparticles in the bump. With this, it is possible to efficiently bond the electrodes with a simple and easy way while reducing a bonding load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.