Method and apparatus for manufacturing a zinc oxide thin film at low temperatures
US7744965B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 17, 2006 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Oct 20, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.