Patent · US Active

Structure of a lithography mask

US7745070B2 · kind B2 · utility

0Cited by

5References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Christelle Charpin-Nicolle · Grenoble, FR
Jean-Yves Robic · Grenoble, FR

Key dates

Filing date	Oct 19, 2005
Grant date	Jun 29, 2010
Priority date	—
Expiry date	Aug 2, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/54
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.