Immersion fluids for lithography
US7745102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jun 6, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/21
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Compositions for use as immersion fluids are described. In general, the immersion fluids can be utilized to perform lithography at short wavelengths (e.g., in a range from about 120 nm to about 260 nm). Some embodiments can be used in a range of actinic radiation between about 140 nm and about 160 nm (e.g., about 157 nm). Immersion fluids can exhibit any number of advantageous features including a relatively high index of refraction (e.g., greater than about 1, or greater than about 1.3, or about greater than about 1.4) and/or a relatively low absorbance (e.g., lower than about 2 μm−1, or lower than about 1 μm−1, or lower than about 0.5 μm−1). Some immersion fluids can include silicon-containing compounds and/or germanium containing compounds. Such compounds can include at least one Ge—O bond or at least one Si—O bond. Such compounds can also include one or more fluorinated moieties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.