Thin solid electrolytic capacitor embeddable in a substrate
US7745281B2 · kind B2 · utility
20Cited by
3References
60Claims
0Family size
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Key dates
| Filing date | Feb 14, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jul 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/185
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.