Semiconductor device and fabrication method thereof
US7745829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Sep 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.