High-power, broad-band, superluminescent diode and method of fabricating the same
US7745836B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Nov 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.