Highly-depleted laser doped semiconductor volume
US7745901B1 · kind B1 · utility
33Cited by
9References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2009 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Feb 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
Abstract
A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.