Piezoelectric thin film resonator, piezoelectric thin film resonator filter and manufacturing method thereof
US7745975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Sep 11, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric thin film resonator includes: a piezoelectric thin film; a laminated structure which includes a first metal electrode film and a second metal electrode film that interpose at least a part of the piezoelectric thin film, and which is formed on a substrate; and an acoustic insulating layer which is formed on the substrate at a position corresponding to the laminated structure, wherein the first metal electrode film is formed on the substrate and the second metal electrode film is formed on the first metal electrode film while sandwiching the piezoelectric thin film, and a protection film laminated on the second metal electrode film is provided so as to cover the second metal electrode film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.