Memory device and method for estimating characteristics of multi-bit programming
US7746702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Dec 20, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.